从事宽禁带半导体材料与器件研究，

主要研究方向：氧化物半导体材料（氧化铟锡ITO）和超宽禁带半导体材料（氮化硼BN）的制备与器件应用。

 近期发表文章：

Ø   Q. Zhang, Q. Li, R. Chen, et al. Large‐Area Self‐Assembled Hexagonal Boron Nitride Nanosheet Films for Ultralow Dark Current Vacuum‐Ultraviolet Photodetectors[J]. Advanced Functional Materials, 2024: 2315149.

Ø   J. Li, Q. Li, R. Chen, et al. Single-Mode Control and Individual Nanoparticle Detection in the Ultraviolet Region Based on Boron Nitride Microdisk with Whispering Gallery Mode[J]. Nanomaterials, 2024, 14(6): 501.

Ø   K. Peng, Q. Li, M. Ma, et al. Acidic Gas Determination Using Indium Tin Oxide-Based Gas Sensors[J]. Sensors, 2024, 24(4): 1286.

Ø   Q. Zhang, Q. Li, W. Fang, et al. High-performance flexible UV-photodetector via self-assembled ZnO films[J]. Journal of Physics D: Applied Physics, 2023, 56(45): 455101.

Ø   R. Chen, Q. Li, Q. Zhang, et al. Electronic Properties of Vertically Stacked h-BN/B1–x Al x N Heterojunction on Si (100)[J]. ACS Applied Materials & Interfaces, 2023, 15(12): 16211-16220.

Ø   W. Fang, Q. Li, J. Li, et al. Deep Ultraviolet Photodetector: Materials and Devices[J]. Crystals, 2023, 13(6): 915.

Ø   Q. Li, Q. Zhang, R. Chen, et al. Wafer−Scale Growth of Fe−Doped Hexagonal Boron Nitride (hBN) Films via Co−Sputtering[J]. Crystals, 2022, 12(6): 777.

Ø   Q. Zhang, Q. Li, W. Zhang, et al. Phase transition and bandgap engineering in B1-xAlxN alloys: DFT calculations and experiments,Applied Surface Science, 2022, 151641.

Ø  Q. Li, Q. Zhang, Y. Bai, et al. Deep-UV hexagonal boron nitride (hBN)/BAlN distributed Bragg reflectors fabricated by RF-sputtering[J]. Optical Materials Express, 2021, 11(1):180.

Ø  Q. Li, X. Qin, Q. Zhang, et al. Resistance switching behaviors of continuous-thick hBN films fabricated by radio-frequency-sputtering[J]. Journal of Materials Research, 2020, 35(23-24):1-10.

Ø  Q. Li, Z. Tian, et al. 3D ITO-nanowire networks as transparent electrode for all-terrain substrate.  Sci. Report, 2019, 9:4983

Ø  Q. Li, Z. Wang, et al. Indium tin oxide nanowires as voltage self-stabilizing supercapacitor electrodes. J Mater. Res. 2019, 241

Ø  Z. Tian, Y. Li, X. Su, L. Feng, S. Wang, W. Ding, Q. Li, Y. Zhang, et al. Super flexible GaN light emitting diodes using microscale pyramid arrays through laser liftoff and dual transfer. Optics Express, 2018,26:1817 

Ø  Q. Li, Y, Zhang, et al. Inverstigation of the influence of growth parameters on self-catalyzed  ITO nanowires by high RF-power sputtering.  Nanotechnology, 2018 ,29:165708.

Ø  Q. Li, S. Wang, et al. ITO nanowire networks coating on u-hole arrayed substrate as super-broadband antireflection layer. Solar Energy  2018, 173:590-596.

Ø  Q. Li, Y. Zhang, et al. Heavily tin-doped indium oxide nano-pyramids as high-performance gas sensor.  AIP Advance 2018, 8: 115316.

Ø  Y. Li, L. Feng, F. Li, P. Hu, M. Du, X. Su, D. Sun, H. Tang, Q. Li and F. Yun, Three-Dimesional Anisotropic Microlaser from GaN-based Self-Bent-Up Microdisk. ACS Photonics 2018, 5，4259

Ø  Q. Li, F. Yun, et al. The fabrication and application of polystyrene-assisted ITO nanowires. Sci. Report  2017, 7:1600

Ø  Q. Li, S. Wang ,et al. Controlled synthesis of polystyrene-assisted tin-doped indium oxide nanowire networks.  J Material Res.  2017,1:1-9  （封面文章）

Ø  Y. Li, L. Feng, X. Su, Q. Li, F. Yun, G. Yuan, J. Han. Whispering gallery mode lasing from InGaN/GaN quantum well microtube. Optics Express, 2017,25,18072

Ø  Q. Li, Z. Gong, Y. F. L, et al. Electro-optical properties of low temperature growth indium-tin-oxide nanowires using polystyrene spheres as catalyst. Nanoscal Res. Lett. 2016, 11:131.

Ø  Q. Li, Z. Tian, G. Shang, et al. Flexible transparent memory cell: bipolar resistive switching via indium-tin oxide nanowire networks on a poly substrate, Appl. Phys. Express  2016, 9, 115002.

Ø  Q. Li, Z. Gong, S. Wang, et al. Resistive switching behaviors of ITO nanowire networks.  AIP Adv. 2016, 6:025222.

Ø  Q. Li, Yufeng Li, M. Zhang, et al. Current spreading in GaN-based light-emitting diodes,  Chin. Phys. B 2016, 25(11):117102.

Ø  Z. Gong, Q. Li*, Y. Li, et al. Polystyrene-catalytic indium–tin–oxide nanorods grown on green light-emitting diodes for enhancing light extraction. Appl. Phys. Express 2016, 9, 082102.

Ø  Q. Li, S. Wang, Z. Gong, et al. Time-resolved photoluminescence studies of InGaN/GaN multi-quantum-wells blue and green light-emitting diodes at room temperature, OPTIK, 2016,127:1809.